Nitrogen vacancy and oxygen impurity in AlN: spintronic quantum dots

Impurity free vacancy disordering of InGaAs quantum dots

Quantum Impurity Physics in Coupled Quantum Dots

Glossary Quantum dot device: nanoscopic electronic device resembling a transistor which incorporates a quantum dot as the central active element; sometimes also called single electron transistor. A quantum dot is an extremely small puddle of electrons which can be considered as an artificial atom since the confinement of electrons leads to quantized energy levels: the electrons form orbitals mu...

Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general ...

Enhanced visible photoluminescence in ZnO quantum dots by promotion of oxygen vacancy formation.

We report on the synthesis of ZnO quantum dots (QDs) rich in oxygen vacancies by inducing an oxygen deficient environment. The precise tunability of particle size is achieved by counter ion capping of the precursor used for synthesis. The prepared QDs show size tunable visible emission with high quantum yield.

Exciton acoustic-phonon coupling in single GaN/AlN quantum dots

Coupling of acoustic phonons to excitons in single wurtzite-type GaN/AlN quantum dots is investigated in detail by cathodoluminescence experiments and compared to theory. Numerical simulations of the coupling in the framework of the independent Boson model with realistic wave functions based on 8-band k · p theory show good agreement with observed emission line shapes. We analyze the influence ...